High-level anion doping towards fast charge transfer kinetics for capacitors

The research team of Prof. Xiaobo Ji and associate Prof. Guoqiang Zou has proposed an ingenious oxygen vacancy (OV) engineering strategy to realize high content anionic doping in TiO2 and offered valuable insights into devise electrode materials with fast charge transfer kinetics in the bulk phase. The article titled "High content anion (S/Se/P) doping assisted by defect engineering with fast charge transfer kinetics for high-performance sodium ion capacitors" is published in Science Bulletin. Xinglan Deng is listed as first author and Prof. Guoqiang Zou as corresponding author.